inchange semiconductor isc product specification isc silicon npn power transistor 2N3583 description contunuous collector current-i c = 1a power dissipation-p d =35w @t c = 25 collector-emitter saturation voltage- : v ce( sat )= 5.0 v(max)@ i c = 1a applications designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regu- lators, converters,deflection st ages and high fidelity amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 250 v v ceo collector-emitter voltage 175 v v ebo emitter-base voltage 6 v i c collector current-continuous 1.0 a i cm collector current-peak 5.0 a i b b base current 1.0 a p c collector power dissipation@t c =25 35 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 5.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2N3583 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma ; i b = 0 175 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.125a b 5.0 v v be( on ) base-emitter on voltage i c = 1a ; v ce = 10v 1.4 v i ceo collector cutoff current v ce = 150v; i b = 0 10 ma i cex collector cutoff current v ce = 225v; v be( off ) = 1.5v v ce = 225v; v be( off ) = 1.5v,t c =150 1.0 3.0 ma i ebo emitter cutoff current v eb = 6v; i c =0 5.0 ma h fe-1 dc current gain i c = 0.1a ; v ce = 10v 40 h fe-2 dc current gain i c = 0.5a ; v ce = 10v 40 200 h fe-3 dc current gain i c = 1a ; v ce = 10v 10 isc website www.iscsemi.cn 2
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